共 50 条
- [35] Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (01): : 159 - 161
- [36] Interfacial Properties of Silicon Nitride Grown on Epitaxial Graphene on 6H-SiC Substrate JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (42): : 22315 - 22318
- [37] Improved interfacial properties of SiO2 grown on 6H-SiC in diluted NO Applied Physics A, 2005, 81 : 159 - 161
- [38] Electronic structure of the Be acceptor centers in 6H-SiC PHYSICAL REVIEW B, 1999, 60 (23): : 15799 - 15809
- [40] The electronic structure of the Be acceptor centers in 6H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 805 - 808