Surface segregation at boron planar doping in silicon molecular beam epitaxy

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作者：
Tatsumi, Toru [1 ]
Hirayama, Hiroyuki [1 ]
Aizaki, Naoaki [1 ]
机构：
[1] NEC Corp, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期
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