LOW-TEMPERATURE FORMATION OF beta -TYPE SILICON CARBIDE BY ION-BEAM MIXING.

被引：0

作者：

Kimura, Tadamasa ^{[1
]}

Tatebe, Yuki ^{[1
]}

Kawamura, Akira ^{[1
]}

Yugo, Shigemi ^{[1
]}

Adachi, Yoshio ^{[1
]}

机构：

[1] Univ of Electro-Communications, Tokyo, Jpn, Univ of Electro-Communications, Tokyo, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 12期

关键词：

ARGON - ION BEAMS - SEMICONDUCTOR MATERIALS - Ion Implantation - SPECTROSCOPY; INFRARED;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper reports on the ion mixing of a carbon-silicon system induced by the Ar-ion bombardment of carbon layers deposited by an arc-discharge on single-crystalline silicon substrates. A study using infrared absorption spectroscopy has shown that a disordered carbon-silicon mixture can be obtained immediately after bombardment and that subsequent annealing causes the formation of a crystalline beta -type silicon carbide phase at about 800 degree C. The formation temperature is lower by about 100 degree C than that for carbon-silicon mixed layers formed by the direct implantation of carbon ions into silicon substrates. Argon-ion bombardment, itself, is found to play an important role in a reduction of the formation temperature.

引用

页码：1712 / 1715

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