Vacancy clusters in α-silicon nitride

被引：0
|
作者：
Wang, C.-M.
机构：
来源：
Philosophical Magazine Letters | 1995年 / 72卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] VACANCY CLUSTERS IN DOPED GOLD
    MANCINI, N
    RIMINI, E
    NUOVO CIMENTO, 1965, 39 (01): : 62 - +
  • [42] Nitrogen and vacancy clusters in ZnO
    Tuomisto, Filip
    Rauch, Christian
    Wagner, Markus R.
    Hoffmann, Axel
    Eisermann, Sebastian
    Meyer, Bruno K.
    Kilanski, Lukasz
    Tarun, Marianne C.
    McCluskey, Matthew D.
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (15) : 1977 - 1983
  • [43] Vacancy aggregates in silicon
    Hastings, JL
    Estreicher, SK
    Fedders, PA
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 509 - 514
  • [44] Vacancy aggregates in silicon
    Hastings, JL
    Estreicher, SK
    Fedders, PA
    PHYSICAL REVIEW B, 1997, 56 (16): : 10215 - 10220
  • [45] VACANCY INTERACTIONS IN SILICON
    WOODBURY, HH
    LUDWIG, GW
    PHYSICAL REVIEW LETTERS, 1960, 5 (03) : 96 - 97
  • [46] The silicon vacancy in SiC
    Janzen, Erik
    Gali, Adam
    Carlsson, Patrick
    Gallstrom, Andreas
    Magnusson, Bjorn
    Son, N. T.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (22) : 4354 - 4358
  • [47] The Silicon Vacancy in SiC
    Janzen, Erik
    Gali, Adam
    Carlsson, Patrick
    Gallstrom, Andreas
    Magnusson, Bjorn
    Son, N. T.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 347 - 352
  • [48] Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon
    Venezia, VC
    Pelaz, L
    Gossmann, HJL
    Haynes, TE
    Rafferty, CS
    APPLIED PHYSICS LETTERS, 2001, 79 (09) : 1273 - 1275
  • [49] Anisotropy of silicon nitride with aligned silicon nitride whiskers
    Park, DS
    Kim, CW
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (03) : 780 - 782
  • [50] Vacancy migration in hexagonal boron nitride
    Zobelli, A.
    Ewels, C. P.
    Gloter, A.
    Seifert, G.
    PHYSICAL REVIEW B, 2007, 75 (09)
12345