Properties of a GaAs-GaAlAs traveling-wave laser amplifier

被引：0

作者：

机构：

[1] Zhang, Yue-Ching

[2] Qin, Zhi-Xin

[3] Wu, Sheng-Li

[4] Wang, Li-Jun

[5] Lee, Dien-en

来源：

Zhang, Yue-Ching | 1600年 / 08期

关键词：

Antireflecting Film - Cavity Mirrors - Gain Measurements - Semiconductor Laser Amplifiers - Traveling-Wave Laser Amplifier;

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[31] 2 20-GHZ GAAS TRAVELING-WAVE POWER-AMPLIFIER
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 290 - 295
[32] PICOSECOND PULSE RESPONSE OF A TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER
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[33] TRAVELING-WAVE AMPLIFIER MADE FROM A LASER DIODE-ARRAY
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[34] AN OPTICAL TRAVELING-WAVE AMPLIFIER UTILIZING AN INJECTION-LASER DIODE
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[36] EFFECT OF SPONTANEOUS EMISSION ON OPERATION OF A GAS TRAVELING-WAVE LASER AMPLIFIER
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[37] NONLINEAR PROPAGATION OF LASER-PULSES IN GAAS-GAALAS MQWS
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[39] TRAVELING-WAVE LASER GYROCOMPASS
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[40] VARIABLE GAIN AMPLIFIER WITH TRAVELING-WAVE STRUCTURE
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