4H-SiC Schottky diodes with high on/off current ratio

被引:0
|
作者
机构
[1] Vassilevski, K.V.
[2] Horsfall, A.B.
[3] Johnson, C.M.
[4] Wright, N.G.
[5] O'Neill, A.G.
来源
Vassilevski, K.V. | 1600年 / Trans Tech Publications Ltd期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:389 / 393
相关论文
共 50 条
  • [41] Temperature dependent IBIC study of 4H-SiC Schottky diodes
    Vittone, E
    Rigato, V
    Olivero, P
    Nava, F
    Manfredotti, C
    LoGiudice, A
    Garino, Y
    Fizzotti, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 231 : 491 - 496
  • [42] Defect influence on the electrical properties of 4H-SiC Schottky diodes
    Scaltrito, L
    Celasco, E
    Porro, S
    Ferrero, S
    Giorgis, F
    Pirri, CF
    Perrone, D
    Meotto, U
    Mandracci, P
    Richieri, G
    Merlin, L
    Cavallini, A
    Castaldini, A
    Rossi, M
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1081 - 1084
  • [43] Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
    Naretto, M.
    Perrone, D.
    Ferrero, S.
    Scaltrito, L.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 227 - +
  • [44] Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects
    P. A. Ivanov
    A. S. Potapov
    N. M. Lebedeva
    I. V. Grekhov
    Technical Physics, 2020, 65 : 2041 - 2046
  • [45] Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects
    Ivanov, P. A.
    Potapov, A. S.
    Lebedeva, N. M.
    Grekhov, I. V.
    TECHNICAL PHYSICS, 2020, 65 (12) : 2041 - 2046
  • [46] Angle resolved IBIC analysis of 4H-SiC Schottky diodes
    Lo Giudice, A.
    Garino, Y.
    Manfredotti, C.
    Rigato, V.
    Vittone, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 (1-2 SPEC. ISS.): : 213 - 216
  • [47] Radiation tolerance comparison of silicon and 4H-SiC Schottky diodes
    Siddiqui, Amna
    Usman, Muhammad
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 135
  • [48] Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes
    Chen, Zihe
    Liu, Ling
    Sun, Yunlong
    Li, Gang
    Yan, Shaoan
    Xiao, Yongguang
    Tang, Minghua
    Li, Zheng
    PHYSICA SCRIPTA, 2024, 99 (08)
  • [49] Barrier height tuning in Ti/4H-SiC Schottky diodes
    Bellocchi, G.
    Vivona, M.
    Bongiorno, C.
    Badala, P.
    Bassi, A.
    Rascuna, S.
    Roccaforte, F.
    SOLID-STATE ELECTRONICS, 2021, 186
  • [50] 4.3 kV 4H-SiC merged PiN/Schottky diodes
    Wu, Jian
    Fursin, Leonid
    Li, Yuzhu
    Alexandrov, Petre
    Weiner, M.
    Zhao, J. H.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (07) : 987 - 991