共 50 条
- [41] Temperature dependent IBIC study of 4H-SiC Schottky diodes NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 231 : 491 - 496
- [42] Defect influence on the electrical properties of 4H-SiC Schottky diodes SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1081 - 1084
- [43] Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 227 - +
- [44] Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects Technical Physics, 2020, 65 : 2041 - 2046
- [46] Angle resolved IBIC analysis of 4H-SiC Schottky diodes NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 (1-2 SPEC. ISS.): : 213 - 216