Lateral bandgap modulation in CdTe/CdMgTe heterostructures by selective ion-implantation

被引：0
|
作者：
Bacher, G. [1 ]
Toennies, D. [1 ]
Eisert, D. [1 ]
Forchel, A. [1 ]
Waag, A. [1 ]
Litz, Th. [1 ]
Landwehr, G. [1 ]
机构：
[1] Universitaet Wuerzburg, Wuerzburg, Germany
来源：
| 1600年 / Trans Tech Publ, Aedermannsdorf卷 / 182-184期
关键词：
8;
D O I：
10.4028/www.scientific.net/msf.182-184.187
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] DIRECT AND SELECTIVE ION-IMPLANTATION OF GAAS SUBSTRATE MATERIAL FOR FET FABRICATION
    STONEHAM, EB
    PATTERSON, GA
    WONG, EH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C390 - C390
  • [32] INVESTIGATION OF MESOSCOPIC STRUCTURES FABRICATED BY CHANNELED SI++ ION-IMPLANTATION OF DEEP HETEROSTRUCTURES
    HORNSEY, RI
    THORNTON, TJ
    CLEAVER, JRA
    AHMED, H
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3203 - 3210
  • [33] EFFECTS OF ION-IMPLANTATION ON THE DISSOLUTION OF MINERALS .2. SELECTIVE DISSOLUTION
    PETIT, JC
    DRAN, JC
    DELLAMEA, G
    BULLETIN DE MINERALOGIE, 1987, 110 (01): : 25 - 42
  • [34] PHOTO-VOLTAIC PROPERTIES OF CDTE P-N-JUNCTIONS PRODUCED BY ION-IMPLANTATION
    CHU, M
    FAHRENBRUCH, AL
    BUBE, RH
    GIBBONS, JF
    JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 322 - 326
  • [35] PHOTO-VOLTAIC PROPERTIES OF CDTE P-N-JUNCTIONS PRODUCED BY ION-IMPLANTATION
    CHU, M
    FAHRENBRUCH, AL
    BUBE, RH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (01): : 32 - 32
  • [36] Bandgap modulation of ZnO/ZnS heterostructures through ion exchange and their efficient transport properties
    Qiao, Fen
    Sun, Kaiyue
    Liu, Wenjie
    Xie, Yi
    Chu, Huaqiang
    VACUUM, 2022, 196
  • [37] USE OF QUANTUM-DIMENSIONAL HETEROSTRUCTURES FOR STUDYING DEFECT FORMATION DURING ION-IMPLANTATION OF SEMICONDUCTORS
    KARPOVICH, IA
    ANSHON, AV
    BAIDUS, NV
    BATUKOVA, LM
    DANILOV, YA
    ZVONKOV, BN
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1994, 58 (05): : 213 - 218
  • [38] Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
    Sawano, Kentarou
    Hoshi, Yusuke
    Yamada, Atsunori
    Hiraoka, Yoshiyasu
    Usami, Noritaka
    Arimoto, Keisuke
    Nakagawa, Kiyokazu
    Shiraki, Yasuhiro
    APPLIED PHYSICS EXPRESS, 2008, 1 (12) : 1214011 - 1214013
  • [39] SITE-SELECTIVE DOPING OF COMPOUND SEMICONDUCTORS BY ION-IMPLANTATION OF RADIOACTIVE NUCLEI
    WEYER, G
    PETERSEN, JW
    DAMGAARD, S
    NIELSEN, HL
    HEINEMEIER, J
    PHYSICAL REVIEW LETTERS, 1980, 44 (03) : 155 - 157
  • [40] SELECTIVE AREA ION-IMPLANTATION FOR GALLIUM-ARSENIDE MICROWAVE DEVICES AND CIRCUITS
    BARTLE, DC
    GRANGE, JD
    GEC JOURNAL OF RESEARCH, 1983, 1 (03): : 174 - 177
12345