SOI EDGE PARASITICS AND THEIR COUPLINGS.

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作者：
Chen, C.-E. [1 ]
机构：
[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA
来源：
IEEE Transactions on Electron Devices | 1986年 / ED-33卷 / 11期
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摘要：
SEMICONDUCTOR DEVICES
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