DEFORMATION ANISOTROPY OF THE GALLIUM ARSENIDE LATTICE UNDER ION IMPLANTATION.

It was reported earlier that when the DRC of gallium arsenide bombarded with Si** plus ions was recorded small deviations from the conditions of symmetric reflection resulted in appreciable differences DELTA theta //i and DELTA theta //2 obtained in reflection from one plane for two positions of the specimen, differing by the rotation of the specimen through 180 degree about the normal to the surface. Here it is shown that this difference is due to the anisotropic character of the deformation arising as the result of the irradiation; this results in a change in the crystal lattice system and, therefore, in the appearance of the angle DELTA phi between planes with identical indices in the matrix and in the deformed layer.