ALLOWING FOR THE PHENOMENON OF NEGATIVE DIFFERENTIAL CONDUCTIVITY IN A SIMPLE MODEL OF A GALLIUM ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTOR.

被引：0

作者：

Popov, A.R.

Rizunenko, V.I.

Kopylov, A.F.

机构：

来源：

Radioelectronics and Communications Systems (English translation of Izvestiya Vysshikh Uchebnykh Z | 1987年 / 30卷 / 10期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;

D O I：

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学科分类号：

摘要：

The authors develop a simple one-dimensional model of a gallium arsenide Schottky-gate field-effect transistor (MESFET), in order to employ it in modeling Schottky field-effect transistors whose volt-ampere characteristics (VAC) exhibit a segment with falling drain current owing to the presence of negative differential conductivity (NDC) in the gallium arsenide. 3 Refs.

引用

页码：97 / 98

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