Spatial and temporal characterization of programming charge in SONOS memory cell: Effects of localized electron trapping

被引：0
|
作者：
机构：
[1] Kim, Bomsoo
[2] Baek, Chang-Ki
[3] Kwon, Wookhyun
[4] Lee, Jawoong
[5] Jeong, Yoon-Ha
[6] Kim, Dae M.
来源：
Kim, B. | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
7
引用
收藏
相关论文
共 50 条
  • [21] Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique
    Rosmeulen, M
    Breuil, L
    Lorenzini, M
    Haspeslag, L
    Van Houdt, J
    De Meyer, K
    SOLID-STATE ELECTRONICS, 2004, 48 (09) : 1525 - 1530
  • [22] A Localized Two-Bit/Cell Nanowire SONOS Memory Using Schottky Barrier Source-Side Injected Programming
    Chang, Wei
    Shih, Chun-Hsing
    Luo, Yan-Xiang
    Hsia, Jui-Kai
    Wu, Wen-Fa
    Lien, Chenhsin
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013, 12 (05) : 760 - 765
  • [23] CHARGE RETENTION IN SCALED SONOS NONVOLATILE SEMICONDUCTOR MEMORY DEVICES - MODELING AND CHARACTERIZATION
    HU, Y
    WHITE, MH
    SOLID-STATE ELECTRONICS, 1993, 36 (10) : 1401 - 1416
  • [24] Silicon nanoparticle charge trapping memory cell
    El-Atab, Nazek
    Ozcan, Ayse
    Alkis, Sabri
    Okyay, Ali K.
    Nayfeh, Ammar
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2014, 8 (07): : 629 - 633
  • [25] Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer
    Ki-Ryung Nam
    Jun-Kyo Jeong
    Jae-Young Sung
    Ga-Won Lee
    Transactions on Electrical and Electronic Materials, 2021, 22 : 372 - 377
  • [26] Modeling and Verification of Interface and Bulk Trap Level Density Extraction in SONOS Memory Charge Trapping Layer
    Nam, Ki-Ryung
    Jeong, Jun-Kyo
    Sung, Jae-Young
    Lee, Ga-Won
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2021, 22 (03) : 372 - 377
  • [27] Unified retention model for localized charge trapping nonvolatile memory device
    Shapira, Asia
    Shur, Yael
    Shacham-Diamand, Yosi
    Shappir, Assaf
    Eitan, Boaz
    APPLIED PHYSICS LETTERS, 2008, 92 (13)
  • [28] Relaxation of localized charge in trapping-based nonvolatile memory devices
    Janai, Meir
    Shappir, Assaf
    Bloom, Ilan
    Eitan, Boaz
    2008 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 46TH ANNUAL, 2008, : 417 - +
  • [29] Charge loss mechanisms in a localized trapping based nonvolatile memory device
    Shur, Yael
    Shacham-Diamand, Yosi
    Lusky, Eli
    Eitan, Boaz
    Shappir, Assaf
    2006 IEEE 24TH CONVENTION OF ELECTRICAL & ELECTRONICS ENGINEERS IN ISRAEL, 2006, : 368 - +
  • [30] Interface states formation in a localized charge trapping nonvolatile memory device
    Shapira, Asia
    Shur, Yael
    Shacham-Diaman, Yosi
    Shappir, Assaf
    Eitan, Boaz
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 508 - 511
12345