共 50 条
- [41] TEMPERATURE-DEPENDENCE OF FAR-INFRARED CYCLOTRON-RESONANCE OF N-TYPE GERMANIUMJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (14): : 2797 - 2801KUCHAR, FVEIGL, K
- [42] REFLECTION FROM HEAVILY DOPED SAMPLES OF N-TYPE PBTE IN INFRARED PART OF SPECTRUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (06): : 746 - &SMIRNOV, IKUKHANOV, YINENSBERG, EDMELNIK, RB
- [44] Far-infrared spectroscopic study of GaAs multi-layer n+-i structuresAPPLIED SURFACE SCIENCE, 2002, 199 (1-4) : 160 - 165Yu, GZhang, YHShen, WZ
- [45] Determination of band-gap narrowing in heavily doped n-type GaAs and n-type GaInP from solar cell performanceESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 317 - 320Ghannam, MYAl Omar, ASFlamand, GPosthuma, NPoortmans, JMertens, RP
- [46] RECOMBINATION MEASUREMENT OF N-TYPE HEAVILY DOPED LAYER IN HIGH/LOW SILICON JUNCTIONSIEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) : 532 - 537BELLONE, SBUSATTO, GRANSOM, CM
- [47] FAR-INFRARED PHOTOCONDUCTIVITY IN PHOSPHORUS DOPED N-TYPE SILICON IN INTERMEDIATE IMPURITY CONCENTRATION REGION UNDER UNIAXIAL COMPRESSIONAL STRESSJOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 36 (05) : 1493 - 1493KINOSHITA, JYAMANOUCHI, CYOSHIHIRO, K
- [48] CATHODOLUMINESCENCE OF HEAVILY DOPED N-TYPE INDIUM ARSENIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 853 - 856VILKOTSKII, VADOMANEVSKII, DSKAKANAKOV, RDKRASOVSKII, VVTKACHEV, VD
- [49] PLASMA OSCILLATIONS IN HEAVILY DOPED N-TYPE SILICONPROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 25 - &ARAI, T
- [50] ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE GERMANIUMJOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (10) : 1903 - 1904FURUKAWA, Y
