Far-infrared ellipsometry of depleted surface layer in heavily doped n-type GaAs

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 17卷 / 2581期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Far-infrared ellipsometry of depleted surface layer in heavily doped n-type GaAs
    Humlicek, J
    Henn, R
    Cardona, M
    APPLIED PHYSICS LETTERS, 1996, 69 (17) : 2581 - 2583
  • [2] FAR-INFRARED RECOMBINATION RADIATION FROM N-TYPE GE AND GAAS
    THOMAS, SR
    FAN, HY
    PHYSICAL REVIEW B, 1974, 9 (10): : 4295 - 4305
  • [3] Time-resolved far-infrared reflectance of n-type GaAs
    van Dantzig, NA
    Planken, PCM
    PHYSICAL REVIEW B, 1999, 59 (03): : 1586 - 1589
  • [4] FAR-INFRARED DONOR ABSORPTION AND PHOTOCONDUCTIVITY IN EPITAXIAL N-TYPE GAAS
    SUMMERS, CJ
    DINGLE, R
    HILL, DE
    PHYSICAL REVIEW B, 1970, 1 (04): : 1603 - &
  • [5] NEGATIVE MAGNETORESISTANCE OF HEAVILY DOPED N-TYPE GAAS
    EMELYANENKO, OV
    NASLEDOV, DN
    OVSYUK, ZS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 915 - +
  • [6] COMPENSATION IN HEAVILY DOPED N-TYPE INP AND GAAS
    ANDERSON, DA
    APSLEY, N
    DAVIES, P
    GILES, PL
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) : 3059 - 3067
  • [7] Fabrication and characterization of heavily doped n-type GaAs for mid-infrared plasmonics
    Duan, Juanmei
    Liedke, Maciej O.
    Dawidowski, Wojciech
    Li, Rang
    Butterling, Maik
    Hirschmann, Eric
    Wagner, Andreas
    Wang, Mao
    Young, Lawrence Boyu
    Lin, Yen-Hsun Glen
    Hong, Minghwei
    Helm, Manfred
    Zhou, Shengqiang
    Prucnal, Slawomir
    JOURNAL OF APPLIED PHYSICS, 2023, 134 (09)
  • [8] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM
    HAAS, C
    PHYSICAL REVIEW, 1962, 125 (06): : 1965 - &
  • [9] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI
    BALKANSKI, M
    AZIZA, A
    AMZALLAG, E
    PHYSICA STATUS SOLIDI, 1969, 31 (01): : 323 - +
  • [10] PROPAGATION OF SURFACE ELECTROMAGNETIC-WAVES ON N-TYPE GAAS IN THE FAR INFRARED
    BEGLEY, DL
    ALEXANDER, RW
    WARD, CA
    BELL, RJ
    SURFACE SCIENCE, 1979, 81 (01) : 238 - 244
12345