Enhanced growth mechanism in lateral solid-phase epitaxy of Si films simultaneously doped with P and Ge atoms

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作者：
Oh, Jeong-Hee [1 ]
Kim, Chul-Ju [1 ]
Ishiwara, Hiroshi [1 ]
机构：
[1] Tokyo Inst of Technology, Yokohama, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 03期
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页码：1605 / 1610
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