共 50 条
- [21] TRANSFORMATION OF DEFECTS IN NARROW-GAP PB1-XSNX TE CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (12): : 1392 - 1393
- [23] Hole concentration and thermoelectric figure of merit for Pb1−xSnxTe:Te solid solutions Semiconductors, 2000, 34 : 897 - 901
- [24] ANALYSIS OF THERMOELECTRIC-POWER IN P-TYPE PB1-XSNX TE DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1979, 32 (03): : 293 - 296
- [26] Characteristic features of the defect formation process in Pb1−xSnxSe(x⩽0.06) Semiconductors, 1998, 32 : 397 - 400
- [27] COMPOSITION DEPENDENCES OF THE PARAMETERS OF A DEEP CENTER IN EPITAXIAL PB1-XSNX TE-IN FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1249 - 1253
- [28] ANALYSIS OF THE TEMPERATURE-DEPENDENCE OF THE CARRIER DENSITY IN PB1-XSNX TE-CD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (03): : 324 - 325
- [29] Growth of Pb1 − xSmxX (X is Se or Te and x = 0.01–0.04) films on porous silicon Crystallography Reports, 2011, 56 : 698 - 701
- [30] 125Te-NMR Study in Novel Superconductor Pb1−xTlxTe with Valence Skipping Dopants Journal of Superconductivity and Novel Magnetism, 2019, 32 : 1629 - 1632