共 50 条
- [41] Characterization of polymer formation during SiO2 etching with different fluorocarbon gases (CHF3, CF4, C4F8) MICROELECTRONIC DEVICE TECHNOLOGY, 1997, 3212 : 376 - 382
- [43] Selective etching of high-k HfO2 films over Si in hydrogen-added fluorocarbon (CF4/Ar/H2 and C4F8/Ar/H2) plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03): : 437 - 443
- [45] Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas:: Angular dependence of SiO2 and Si3N4 etching rates JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06): : 3281 - 3286
- [46] Highly selective SiO2 etching in low-electron-temperature inductively coupled plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3602 - 3604
- [47] Highly selective SiO2 etching using inductively coupled plasma source with a multispiral coil JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4B): : 2343 - 2348
- [48] Highly selective SiO2 etching using inductively coupled plasma source with a multispiral coil Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (4 B): : 2343 - 2348
- [49] Influence on selective SiO2/Si etching of carbon atoms produced by CH4 addition to a C4F8 permanent magnet electron cyclotron resonance etching plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (06): : 2880 - 2884
- [50] SiO2 etching in an Ar/c-C4F8/O2 dual frequency capacitively coupled plasma JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (02):