Influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metallorganic vapor-phase epitaxy

被引：0
|
作者：
Liu, Xianglin [1 ]
Wang, Lianshan [1 ]
Lu, Da-Cheng [1 ]
Wang, Du [1 ]
Wang, Xiaohui [1 ]
Lin, Lanying [1 ]
机构：
[1] Chinese Acad of Sciences, Beijing, China
来源：
Journal of Crystal Growth | / 189-190卷
关键词：
This work was financially supported by the National Advanced Materials Committee of People's Republic of China;
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学科分类号：
摘要：
5
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页码：287 / 290
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