Dependence of optical and electrical properties of a-Si1-xCx:H films on thermal annealing

被引:0
|
作者
Ohkubo, Tsutomu [1 ]
Motohashi, Mitsuya [1 ]
Homma, Kazuaki [1 ]
机构
[1] Tokyo Denki Univ, Tokyo, Japan
来源
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) | 1997年 / 80卷 / 03期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:30 / 38
相关论文
共 50 条
  • [41] Microstructure and hydrogen dynamics in a-Si1-xCx:H
    Shinar, R
    Shinar, J
    Williamson, DL
    Mitra, S
    Kavak, H
    Dalal, VL
    AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999, 1999, 557 : 329 - 334
  • [42] The energy gap in a-Si1-xCx:H alloys
    Valladares, AA
    Valladares, A
    Sansores, LE
    Mc Nelis, MA
    PHYSICS LETTERS A, 1997, 236 (5-6) : 577 - 582
  • [43] Influence of Si-C bond density on the properties of a-Si1-xCx thin films
    Shaik, Habibuddin
    Raman, K. H. Thulasi
    Rao, G. Mohan
    APPLIED SURFACE SCIENCE, 2012, 258 (07) : 2989 - 2996
  • [44] Infrared characterization of a-Si:H/a-Si1-xCx:H interfaces
    Bertomeu, J
    Puigdollers, J
    Asensi, JM
    Andreu, J
    APPLIED SURFACE SCIENCE, 1997, 108 (02) : 211 - 217
  • [45] Optical properties and room-temperature photoluminescence from Tb3+ ions in a-Si1-xCx:H thin films
    Nikolaeva, M
    Sendova-Vassileva, M
    Dimova-Malinovska, D
    Pivin, JC
    VACUUM, 2002, 69 (1-3) : 233 - 236
  • [46] Modification of magnetron sputtered a-Si1-xCx:H films by implantation of Ge+
    Tzenov, N
    DimovaMalinovska, D
    Marinova, T
    Krastev, V
    Tsvetkova, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4): : 342 - 347
  • [47] Modification magnetron sputtered a-Si1-xCx:H films by implantation of Sn+
    Tzenov, N
    DimovaMalinovska, D
    Tsvetkova, T
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 243 - 248
  • [48] Effect of vacuum annealing on charge transport and trapping in a-Si1-xCx:H/c-Si heterostructures
    Gomeniuk, Y. V.
    Gordienko, S. O.
    Nazarov, A. N.
    Vasin, A. V.
    Rusavsky, A. V.
    Stepanov, V. G.
    Lysenko, V. S.
    Ballutaud, D.
    Ashok, S.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (02) : 168 - 173
  • [49] Al thermal diffusion in a-Si1-xCx:H thin film studied by XAFS
    Prado, R. J.
    Fantini, M. C. A.
    Carreno, M. N. P.
    Pereyra, I.
    Flank, A. M.
    X-RAY ABSORPTION FINE STRUCTURE-XAFS13, 2007, 882 : 529 - +
  • [50] Time-resolved photoluminescence in a-Si1-xCx:H
    Tessler, LR
    Cirino, LR
    AMORPHOUS SILICON TECHNOLOGY - 1996, 1996, 420 : 783 - 788