Ferromagnetic/III-V semiconductor heterostructures and magneto-electronic devices

被引：0
|
作者：
Xu, Y.B. [1 ]
Freeland, D.J. [1 ]
Tselepi, M. [1 ]
Guertler, C.M. [1 ]
Lee, W.Y. [1 ]
Bland, J.A.C. [1 ]
Holmes, S.N. [1 ]
Patel, N.K. [1 ]
Ritchie, D.A. [1 ]
机构：
[1] Univ of Cambridge, Cambridge, United Kingdom
来源：
IEEE Transactions on Magnetics | 1999年 / 35卷 / 5 pt 2期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3661 / 3663
相关论文
共 50 条
  • [41] DEGRADATION OF III-V OPTO-ELECTRONIC DEVICES
    UEDA, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : C11 - C22
  • [42] III-V nanowire heterostructures
    Dubrovskii, V. G.
    2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018), 2018, : 436 - 436
  • [43] Compositional characterization of III-V semiconductor heterostructures by friction force microscopy
    Garcia, R
    Tamayo, J
    Gonzalez, L
    Gonzalez, Y
    MICRO/NANOTRIBOLOGY AND ITS APPLICATIONS, 1997, 330 : 275 - 282
  • [44] Effects of spin-dependent tunneling in III-V semiconductor heterostructures
    Yassievich, I. N.
    Alekseev, P. S.
    Tarasenko, S. A.
    Perel, V. I.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 1259 - +
  • [45] MOCVD CHALLENGE FOR III-V SEMICONDUCTOR-MATERIALS FOR PHOTONIC AND ELECTRONIC DEVICES ON ALTERNATIVE SUBSTRATES
    RAZEGHI, M
    DEFOUR, M
    OMNES, F
    MAUREL, P
    BIGAN, E
    ACHER, O
    NAGLE, J
    BRILLOUET, F
    PORTAL, JC
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 776 - 781
  • [46] Segregation in III-V semiconductor heterostructures studied by transmission electron microscopy
    Schowalter, M
    Melzer, M
    Rosenauer, A
    Gerthsen, D
    Krebs, R
    Reithmaier, JP
    Forchel, A
    Arzberger, M
    Bichler, M
    Abstreiter, G
    Grau, M
    Amann, MC
    Sellin, R
    Bimberg, D
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 127 - 130
  • [47] Magnetic Shielding Design for Magneto-Electronic Devices Protection
    Wang, Weizhong
    Jiang, Zhenye
    IEEE TRANSACTIONS ON MAGNETICS, 2008, 44 (11) : 4175 - 4178
  • [48] III-V semiconductor based MOEMS devices for optical telecommunications
    Garrigues, M
    Leclercq, JL
    Viktorovitch, P
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 933 - 945
  • [49] Efficient terahertz devices based on III-V semiconductor photoconductors
    Kostakis, Ioannis
    Saeedkia, Daryoosh
    Missous, Mohamed
    IET OPTOELECTRONICS, 2014, 8 (02) : 33 - 39
  • [50] Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
    Gao, Q.
    Joyce, H. J.
    Paiman, S.
    Tan, H. H.
    Kim, Y.
    Smith, L. M.
    Jackson, H. E.
    Yarrison-Rice, J. M.
    Zhang, X.
    Zou, J.
    Jagadish, C.
    2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, : 676 - +
12345