Refractive index study of AlxGa1-xN films grown on sapphire substrates

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作者：
机构：
[1] Sanford, N.A.
[2] Robins, L.H.
[3] Davydov, A.V.
[4] Shapiro, A.
[5] Tsvetkov, D.V.
[6] Dmitriev, A.V.
[7] Keller, S.
[8] Mishra, U.K.
[9] DenBaars, S.P.
来源：
Sanford, N.A. (sanford@boulder.nist.gov) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Energy dispersive spectroscopy - Metallorganic chemical vapor deposition - Refractive index - Sapphire - Semiconducting aluminum compounds - Vapor phase epitaxy - X ray spectroscopy;
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摘要：
A prism coupling method was used to measure the ordinary and extraordinary refractive indices of AlxGa1-xN films. The films were grown by hydride vapor phase epitaxy and metallorganic chemical vapor deposition. Spectroscopic transmittance and reflectance were also used for the analysis.
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