Refractive index study of AlxGa1-xN films grown on sapphire substrates

被引：0
|
作者：
机构：
[1] Sanford, N.A.
[2] Robins, L.H.
[3] Davydov, A.V.
[4] Shapiro, A.
[5] Tsvetkov, D.V.
[6] Dmitriev, A.V.
[7] Keller, S.
[8] Mishra, U.K.
[9] DenBaars, S.P.
来源：
Sanford, N.A. (sanford@boulder.nist.gov) | 1600年 / American Institute of Physics Inc.卷 / 94期
关键词：
Energy dispersive spectroscopy - Metallorganic chemical vapor deposition - Refractive index - Sapphire - Semiconducting aluminum compounds - Vapor phase epitaxy - X ray spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A prism coupling method was used to measure the ordinary and extraordinary refractive indices of AlxGa1-xN films. The films were grown by hydride vapor phase epitaxy and metallorganic chemical vapor deposition. Spectroscopic transmittance and reflectance were also used for the analysis.
引用
收藏
相关论文
共 50 条
  • [1] Refractive index study of AlxGa1-xN films grown on sapphire substrates
    Sanford, NA
    Robins, LH
    Davydov, AV
    Shapiro, A
    Tsvetkov, DV
    Dmitriev, AV
    Keller, S
    Mishra, UK
    DenBaars, SP
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) : 2980 - 2991
  • [2] Determination of the refractive indices of AlN, GaN, and AlxGa1-xN grown on (111)Si substrates
    Antoine-Vincent, N
    Natali, F
    Mihailovic, M
    Vasson, A
    Leymarie, J
    Disseix, P
    Byrne, D
    Semond, F
    Massies, J
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) : 5222 - 5226
  • [3] An alternative method to determine the refractive index of AlxGa1-xN
    Engelbrecht, J. A. A.
    Sephton, B.
    Minnaar, E.
    Wagener, M. C.
    PHYSICA B-CONDENSED MATTER, 2016, 480 : 181 - 185
  • [4] Investigation of inhomogeneites in epitaxial AlxGa1-xN layers grown on sapphire
    Tretyakov, VV
    Rukolaine, SA
    Usikov, AS
    Makarov, SV
    MIKROCHIMICA ACTA, 2000, 132 (2-4) : 361 - 364
  • [5] Luminescence properties of heavily doped AlxGa1-xN/AlN films grown on sapphire substrate
    Bokhan, P. A.
    Fateev, N., V
    Malin, T., V
    Osinnykh, I., V
    Zakrevsky, Dm E.
    Zhuravlev, K. S.
    JOURNAL OF LUMINESCENCE, 2018, 203 : 127 - 134
  • [6] Surface morphology of AlxGa1-xN films grown by MOCVD
    Geng, L
    Ponce, FA
    Tanaka, S
    Omiya, H
    Nakagawa, Y
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 803 - 806
  • [7] AlxGa1-xN p-i-n photodiodes on sapphire substrates
    Walker, D
    Kung, P
    Sandvik, P
    Wu, J
    Hamilton, M
    Lee, IH
    Diaz, J
    Razeghi, M
    PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 : 193 - 198
  • [8] Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
    Kim, JW
    Son, CS
    Choi, IH
    Park, YK
    Kim, YT
    Ambacher, O
    Stutzmann, M
    JOURNAL OF CRYSTAL GROWTH, 2000, 208 (1-4) : 37 - 41
  • [9] Mechanical properties of AlxGa1-xN films with high Al composition grown on AlN/sapphire templates
    Xu, F. J.
    Shen, B.
    Wang, M. J.
    Xu, J.
    Lu, L.
    Miao, Z. L.
    Yang, Z. J.
    Qin, Z. X.
    Zhang, G. Y.
    Lin, B.
    Bai, S. L.
    APPLIED PHYSICS LETTERS, 2007, 91 (09)
  • [10] Measurement of AlxGa1-xN refractive indices
    Webb-Wood, G
    Özgür, Ü
    Everitt, HO
    Yun, F
    Morkoç, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 793 - 797
12345