Physics and application of Si:Er for light emitting diodes

被引：0
|
作者：
Michel, J. [1 ]
Ren, F.Y.G. [1 ]
Zheng, B. [1 ]
Jacobson, D.C. [1 ]
Poate, J.M. [1 ]
Kimerling, L.C. [1 ]
机构：
[1] Dep of Materials Science and, Engineering, Cambridge, United States
来源：
Materials Science Forum | 1994年 / 143-4卷 / pt 2期
关键词：
Back transfer process - Inhomogeneous broadening - Photoexcitation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：707 / 714
相关论文
共 50 条
  • [31] Dislocation engineering for Si-based light emitting diodes
    Gwilliam, R
    Lourenço, MA
    Milosavljevic, M
    Homewood, KP
    Shao, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 86 - 92
  • [32] Physics of Efficiency Droop in GaN: Eu Light-Emitting Diodes
    Fragkos, Ioannis E.
    Dierolf, Volkmar
    Fujiwara, Yasufumi
    Tansu, Nelson
    SCIENTIFIC REPORTS, 2017, 7
  • [33] The application of polyfluorenes and related polymers in light emitting diodes
    Bernius, M
    Inbasekaran, M
    Woo, E
    Wu, WS
    Wujkowski, L
    LIGHT-EMITTING DIODES: RESEARCH, MANUFACTURING, AND APPLICATIONS III, 1999, 3621 : 93 - 102
  • [34] The application of the Light Emitting Diodes (LED) in optical measurements
    Sabinin, VE
    Savelyev, SK
    Solk, SV
    LASERS FOR MEASUREMENTS AND INFORMATION TRANSFER 2002, 2003, 5066 : 325 - 329
  • [35] Device physics of single layer organic light-emitting diodes
    Crone, BK
    Campbell, IH
    Davids, PS
    Smith, DL
    Neef, CJ
    Ferraris, JP
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5767 - 5774
  • [36] Physics and technology of mid-infrared light emitting diodes - Discussion
    Simecek, T
    Krier, A
    Phillips, C
    Krier, A
    PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2001, 359 (1780): : 619 - 619
  • [37] Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
    Ioannis E. Fragkos
    Volkmar Dierolf
    Yasufumi Fujiwara
    Nelson Tansu
    Scientific Reports, 7
  • [38] ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers
    Ye, Z. Z.
    Lu, J. G.
    Zhang, Y. Z.
    Zeng, Y. J.
    Chen, L. L.
    Zhuge, F.
    Yuan, G. D.
    He, H. P.
    Zhu, L. P.
    Huang, J. Y.
    Zhao, B. H.
    APPLIED PHYSICS LETTERS, 2007, 91 (11)
  • [39] The application of light emitting diodes to traffic signals - Discussion
    Packer, M
    JOURNAL OF THE ILLUMINATING ENGINEERING SOCIETY, 1997, 26 (01): : 24 - 24
  • [40] The application of light emitting diodes to traffic signals - Response
    不详
    JOURNAL OF THE ILLUMINATING ENGINEERING SOCIETY, 1997, 26 (01): : 25 - 26
12345