Optical properties of GaInAs/InP multi-quantum wells grown by low-pressure MOVPE

被引：0
|
作者：
Laurenti, J.P. [1 ]
Camassel, J. [1 ]
Reynes, B. [1 ]
Grutzmacher, D. [1 ]
Wolter, K. [1 ]
Kurz, H. [1 ]
机构：
[1] Univ des Sciences et Techniques du, Languedoc, France
来源：
Semiconductor Science and Technology | 1990年 / 5卷 / 03期
关键词：
Semiconducting Gallium Compounds;
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学科分类号：
摘要：
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页码：222 / 228
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