Design of GaAs microstrip particle detectors

被引：0

作者：

Shao, Chuanfen ^{[1
]}

Shi, Changxin ^{[1
]}

Ling, Xing ^{[1
]}

Wen, Boying ^{[2
]}

机构：

[1] Inst. of Microelectronic Technol., Shanghai Jiaotong Univ., Shanghai 200030, China

[2] Sch. of Sci., Shanghai Univ., Shanghai 200436, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 2004年 / 24卷 / 01期

关键词：

Current density - Detectors - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This paper introduces a new idea and new design of chip and process of the manufacture of GaAs microstrip particle detectors. The length of each microstrip is 17 000 μm, and their widths are 20,50,100,200,300 μm respectively. The pitch of microstrip has 4 kinds, which are 50,100,200 and 300 μm. The area of the chip is 5.95 mm×17.00 mm. Their highest reverse breakdown voltage is 240 V, and the lowest reverse leakage current density is 0.025 μA/mm2. They have high illumination-sensitivity. The irradiation characteristics of these microstrip particle detectors will be reported in another paper.

引用

页码：60 / 63

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