Investigation of the substrate/epitaxial interface of Si/Si1-xGex layers grown by LPCVD

被引：0
|
作者：
Loo, R.
Vescan, L.
Dieker, C.
Freundt, D.
Hartmann, A.
Muck, A.
机构：
来源：
Journal De Physique | 1995年 / 5卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：5 / 895
相关论文
共 50 条
  • [1] INVESTIGATION OF THE SUBSTRATE EPITAXIAL INTERFACE OF SI/SI1-XGEX LAYERS GROWN BY LPCVD
    LOO, R
    VESCAN, L
    DIEKER, C
    FREUNDT, D
    HARTMANN, A
    MUCK, A
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 895 - 903
  • [2] INVESTIGATION OF DISLOCATIONS IN SI1-XGEX/SI HETEROSTRUCTURES GROWN BY LPCVD
    TANG, HP
    VESCAN, L
    DIEKER, C
    SCHMIDT, K
    LUTH, H
    LI, HD
    JOURNAL OF CRYSTAL GROWTH, 1992, 125 (1-2) : 301 - 310
  • [3] STRUCTURE OF EPITAXIAL LAYERS OF GAAS/SI1-XGEX GROWN ON SI(001) SEEDS
    VDOVIN, VI
    NOVIKOVA, EN
    MILVIDSKII, MG
    MITIN, VV
    TARASOVA, OA
    YUGOVA, TG
    KRISTALLOGRAFIYA, 1990, 35 (04): : 974 - 979
  • [4] INFLUENCE OF SUBSTRATE ORIENTATION ON THE CHARACTERISTICS OF SI1-XGEX/SI STRAINED LAYERS GROWN BY MBE
    ETOH, H
    MURAKAMI, E
    ISHIZAKA, A
    SHIMADA, T
    MIYAO, M
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 263 - 268
  • [5] THE INVESTIGATION OF STRAIN DISTRIBUTION IN SI1-XGEX EPITAXIAL LAYERS BY RAMAN MICROSCOPY
    ROTHWELL, WJ
    DAVEY, ST
    WAKEFIELD, B
    GIBBINGS, CJ
    TUPPEN, CG
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 253 - 258
  • [6] THE INVESTIGATION OF STRAIN DISTRIBUTION IN SI1-XGEX EPITAXIAL LAYERS BY RAMAN MICROSCOPY
    ROTHWELL, WJ
    DAVEY, ST
    WAKEFIELD, B
    GIBBINGS, CJ
    TUPPEN, CG
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 253 - 258
  • [7] Investigation of interfacial reaction of Ni on epitaxial Si1-xGex (001)layers
    Ok, YW
    Kim, SH
    Song, YJ
    Shim, KH
    Seong, TY
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 467 - 470
  • [8] In-line and nondestructive analysis of selectively grown epitaxial Si1-xGex and Si/Si1-xGex layers by Spectroscopic Ellipsometry and comparison with other established techniques
    Loo, R
    Caymax, M
    Blavier, G
    Kremer, S
    IN-LINE CHARACTERIZATION, YIELD, RELIABILITY, AND FAILURE ANALYSIS IN MICROELECTRONIC MANUFACTURING II, 2001, 4406 : 131 - 140
  • [9] Analytical strain relaxation model for Si1-xGex/Si epitaxial layers
    Menendez, Jose
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (06)
  • [10] ION-IMPLANTATION IN SI/SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES
    MANTL, S
    HOLLANDER, B
    JAGER, W
    KABIUS, B
    JORKE, HJ
    KASPER, E
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 405 - 408
12345