Technology and properties of GaInAsSb layers grown on GaSb substrates

The Ga1-xInxAsySb1-y layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X-ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg-GaInAsSb. The different compositions of Ga1-xInxAsySb1-y compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality. n-type layers, with carrier concentration below 3.1015cm-3 have been grown.