Technology and properties of GaInAsSb layers grown on GaSb substrates

被引：0

作者：

Piskorski, M. ^{[1
]}

Papis, E. ^{[1
]}

Golaszewska, K. ^{[1
]}

Jung, W. ^{[1
]}

Adamczewska, J. ^{[1
]}

Perchuc, L. ^{[1
]}

机构：

[1] Inst of Electron Technology, Warszawa, Poland

来源：

Electron Technology (Warsaw) | 2000年 / 33卷 / 03期

关键词：

Carrier concentration - Composition - Liquid phase epitaxy - Microanalysis - Numerical analysis - Optical microscopy - Schottky barrier diodes - Semiconductor growth;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The Ga1-xInxAsySb1-y layers were grown on GaSb substrates by the liquid phase epitaxy (LPE) technique. The materials were characterized by means of optical microscopy, X-ray high resolution diffractometry, electroprobe microanalysis (EPXMA) and numerical analysis of measured C-V characteristic of Schottky barrier junction Hg-GaInAsSb. The different compositions of Ga1-xInxAsySb1-y compounds lattice matched to GaSb substrates with x value changing from 0.021 to 0.23, were established. Applying of sulfidation technique to the substrate's surface before growth, improved layer's quality. n-type layers, with carrier concentration below 3.1015cm-3 have been grown.

引用

页码：393 / 399

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