Observation of surface defects in 6H-SiC wafers

被引：0
|
作者：
机构：
来源：
| 1600年 / 74期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Fine machining of large-diameter 6H-SiC wafers
    Chen, Xiufang
    Li, Juan
    Ma, Deying
    Hu, Xiaobo
    Xu, Xiangang
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2006, 22 (05) : 681 - 684
  • [22] Surface Polishing of 6H-SiC Substrates
    Xiufang CHEN
    Journal of Materials Science & Technology, 2007, (03) : 430 - 432
  • [23] Surface polishing of 6H-SiC substrates
    Chen, Xiufang
    Xu, Xiangang
    Li, Juan
    Jiang, Shouzhen
    Ning, Lina
    Wang, Yingmin
    Ma, Deying
    Hu, Xiaobo
    Jiang, Minhua
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2007, 23 (03) : 430 - 432
  • [24] Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers
    Gupta, Saurabh
    Pecholt, Ben
    Molian, Pal
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (01) : 196 - 206
  • [25] Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC
    Smith, AR
    Ramachandran, V
    Feenstra, RM
    Greve, DW
    Neugebauer, J
    Northrup, JE
    Shin, M
    Skowronski, M
    NITRIDE SEMICONDUCTORS, 1998, 482 : 363 - 368
  • [26] Excimer laser ablation of single crystal 4H-SiC and 6H-SiC wafers
    Saurabh Gupta
    Ben Pecholt
    Pal Molian
    Journal of Materials Science, 2011, 46 : 196 - 206
  • [27] CONTROLLED GROWTH OF 3C-SIC AND 6H-SIC FILMS ON LOW-TILT-ANGLE VICINAL (0001) 6H-SIC WAFERS
    POWELL, JA
    PETIT, JB
    EDGAR, JH
    JENKINS, IG
    MATUS, LG
    YANG, JW
    PIROUZ, P
    CHOYKE, WJ
    CLEMEN, L
    YOGANATHAN, M
    APPLIED PHYSICS LETTERS, 1991, 59 (03) : 333 - 335
  • [28] Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures
    Barthe, MF
    Henry, L
    Corbel, C
    Blondiaux, G
    Saarinen, K
    Hautojärvi, P
    Hugonnard, E
    Di Cioccio, L
    Letertre, F
    Ghyselen, B
    PHYSICAL REVIEW B, 2000, 62 (24) : 16638 - 16644
  • [29] Effects of surface defects on the performance of 4H-and 6H-SiC pn junction diodes
    Kimoto, T
    Miyamoto, N
    Matsunami, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 349 - 352
  • [30] Observation of metastable defect in electron irradiated 6H-SiC
    Hemmingsson, CG
    Son, NT
    Kordina, O
    Lindstrom, JL
    Janzen, E
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 561 - 564
12345