KrF excimer lithography eyed for 0.25μm device technology

被引:0
|
作者
Anon
机构
来源
JEE. Journal of electronic engineering | 1995年 / 32卷 / 348期
关键词
Semiconductor device manufacture;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
    Nakao, Shuji
    Tsujita, Kouichirou
    Arimoto, Ichirou
    Wakamiya, Wataru
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (12 B): : 6985 - 6993
  • [32] Imaging characteristics of 0.12 μm dynamic random access memory pattern by KrF excimer laser lithography
    Nakao, S
    Tsujita, K
    Arimoto, I
    Wakamiya, W
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 6985 - 6993
  • [33] NEW KRF AND ARF EXCIMER-LASER FOR ADVANCED DUV LITHOGRAPHY
    ENDERT, H
    PATZEL, R
    POWELL, M
    REBHAN, U
    BASTING, D
    MICROELECTRONIC ENGINEERING, 1995, 27 (1-4) : 221 - 224
  • [34] Phantom exposure of chemically amplified resist in KrF excimer laser lithography
    Kawai, Y
    Deguchi, K
    Nakamura, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (12B): : 6994 - 6998
  • [35] APPLICATION OF KRF EXCIMER-LASER LITHOGRAPHY TO 256 MBDRAM FABRICATION
    FUKUZAWA, S
    YOSHINO, H
    ISHIDA, S
    KONDOH, K
    YOSHII, T
    AIZAKI, N
    IEICE TRANSACTIONS ON ELECTRONICS, 1993, E76C (11) : 1665 - 1669
  • [36] NEW NEGATIVE DEEP UV RESIST FOR KRF EXCIMER LASER LITHOGRAPHY
    ENDO, M
    TANI, Y
    SASAGO, M
    NOMURA, N
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 197 : 35 - PMSE
  • [37] PERFORMANCE OF 0.2 MU-M OPTICAL LITHOGRAPHY USING KRF AND ARF EXCIMER-LASER SOURCES
    YAMASHITA, K
    ENDO, M
    SASAGO, M
    NOMURA, N
    NAGANO, H
    MIZUGUCHI, S
    ONO, T
    SATO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06): : 2692 - 2696
  • [38] Optical performance of KrF excimer laser lithography with phase shift mask for fabrication of 0.15 mu m and below
    Terasawa, T
    Imai, A
    Fukuda, H
    Ueno, T
    Okazaki, S
    INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 1995, 29 (03): : 229 - 234
  • [39] Application of new thin BARC technology for KrF lithography at 80-nm node device
    Kim, MS
    Shim, KC
    Kim, HJ
    Kwon, KS
    Lee, HG
    Lee, CS
    Gil, MG
    Song, YW
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 724 - 728
  • [40] INTEGRATED ELECTRON-BEAM LITHOGRAPHY FOR 0.25 MU-M DEVICE FABRICATION
    BUCCHIGNANO, J
    ROSENFIELD, M
    PEPPER, G
    DAVARI, B
    HOLM, F
    VISWANATHAN, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1827 - 1831