Neutron induced radiation damage of a n-type Ge detector influence of the operating temperature.

被引：0

作者：

Thomas, H.G. ^{[1
]}

Eberth, J. ^{[1
]}

Becker, F. ^{[1
]}

Burkardt, T. ^{[1
]}

Freund, S. ^{[1
]}

Hermkens, U. ^{[1
]}

Mylaeus, T. ^{[1
]}

Skoda, S. ^{[1
]}

Teichert, W. ^{[1
]}

Werth, A.v.d ^{[1
]}

Von Brentano, P. ^{[1
]}

Berst, M. ^{[1
]}

Gutknecht, D. ^{[1
]}

Henck, R. ^{[1
]}

机构：

[1] Inst fur Kernphysik der Univ Koln, Koln, Germany

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1993年 / A332卷 / 1-2期

关键词：

HPGe detectors - Multidetector arrays;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：215 / 219

共 50 条

[31] PREPARATION OF THIN N-TYPE SILICON SPECIMENS FOR RADIATION DAMAGE STUDIES
HEMMENT, PLF
STEVENS, PRC
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (01): : 19 - +
[32] ANNEALING OF FAST NEUTRON DAMAGE IN IMPURITY-CONDUCTING N-TYPE GERMANIUM
WOLF, EL
COMPTON, WD
DEPP, SW
JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4941 - &
[33] Radiation-induced defects in n-type GaN and InN
Emtsev, VV
Davydov, VY
Haller, EE
Klochikhin, AA
Kozlovskii, VV
Oganesyan, GA
Poloskin, DS
Shmidt, NM
Vekshin, VA
Usikov, AS
PHYSICA B-CONDENSED MATTER, 2001, 308 : 58 - 61
[34] THERMAL-NEUTRON-INDUCED DEFECTS IN N-TYPE CADMIUM TELLURIDE
BARNES, C
KIKUCHI, C
NUCLEAR SCIENCE AND ENGINEERING, 1968, 31 (03) : 513 - &
[35] DETERMINATION OF TEMPERATURE OF HOT ELECTRONS IN N-TYPE GE FROM LONGITUDINAL MAGNETORESISTANCE
VESELAGO, VG
GLUSHKOV, MV
LEONOV, YS
SHOTOV, AP
SOVIET PHYSICS SOLID STATE,USSR, 1971, 13 (03): : 765 - &
[36] THERMAL-NEUTRON-INDUCED RECOIL IN N-TYPE CADMIUM TELLURIDE
BARNES, C
KIKUCHI, C
TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1967, 10 (01): : 115 - &
[37] ANOMALOUS TEMPERATURE DEPENDENCE OF THE HALL MOBILITY IN COMPENSATED n-TYPE Ge.
Golovkina, E.D.
Levchenya, N.N.
Shik, A.Ya.
1600, (10):
[38] Formation of n-Type Ge on Insulator by Low-Temperature Sb-Induced Layer Exchange Crystallization
Gao, Hongmiao
Aoki, Rikuta
Sasaki, Masaya
Miyao, Masanobu
Sadoh, Taizoh
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2017, : 21 - 22
[39] Low-Temperature Formation of n-Type Ge/Insulator by Sb-Induced Layer Exchange Crystallization
Gao, Hongmiao
Aoki, Rikuta
Sasaki, Masaya
Miyao, Masanobu
Sadoh, Taizoh
2017 24TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2017, : 239 - 240
[40] LOW-TEMPERATURE RADIATION-DAMAGE IN SILICON .1. ANNEALING STUDIES ON N-TYPE MATERIAL
AWADELKARIM, OO
PHYSICA B & C, 1987, 144 (03): : 341 - 350

← 1 2 3 4 5 →