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- [6] POSSIBLE RADIATION DETECTOR BASED ON THE USE OF n-TYPE Ge AT 4 degree K. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (10):
- [7] TEMPERATURE DEPENDENCE OF RATE OF FALL OF ELECTRON DENSITY IN N-TYPE GE AND N-TYPE SI DURING FAST-NEUTRON IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1569 - +
- [8] Fast neutron-induced damage in INTEGRAL n-type HPGe detectors NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 430 (2-3): : 348 - 362
- [9] PIEZORESISTANCE OF N-TYPE GE CONTAINING RADIATION DEFECTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1076 - 1077
- [10] BEHAVIOR OF N-TYPE GE EXPOSED TO HIGHLY ENERGETIC RADIATION PHYSICAL REVIEW, 1965, 138 (1A): : A294 - &