Realistic etch yield of fluorocarbon ions in SiO2 etch process

被引：0
|
作者：
Hikosaka, Yukinobu [1 ,3 ]
Hayashi, Hisataka [1 ]
Sekine, Makoto [1 ]
Tsuboi, Hideo [2 ]
Endo, Mitsuhiro [2 ]
Mizutani, Naoki [2 ]
机构：
[1] Assoc. Super-Adv. Electronics T., 292 Yoshida, Totsuka, Yokohama, 244-0817, Japan
[2] ULVAC JAPAN, Ltd., 2500 Hagisono, Chigasaki, Kanagawa, 253-8543, Japan
[3] Device Development Div. Fujitsu Ltd., 4-2 Moriyama Nishine Kanegasaki-cho, Isawa-gun, Iwate 029-4593, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 7 B期
关键词：
D O I：
10.1143/jjap.38.4465
中图分类号：
学科分类号：
摘要：
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页码：4465 / 4472
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