Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance

被引:0
|
作者
机构
[1] Saitoh, Masumi
[2] Hiramoto, Toshiro
来源
Saitoh, M. | 1600年 / American Institute of Physics Inc.卷 / 91期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 47 条
  • [41] Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist
    Nishiyama, Shimpei
    Kato, Kimihiko
    Liu, Yongxun
    Mizokuchi, Raisei
    Yoneda, Jun
    Kodera, Tetsuo
    Mori, Takahiro
    IEICE TRANSACTIONS ON ELECTRONICS, 2023, E106C (10) : 592 - 596
  • [42] Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot
    Saitoh, M
    Hiramoto, T
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 753 - 756
  • [43] Study on Cold-Finger 3He Cryostat for Precision Measurements of Quantum Hall Resistance and Single-Electron Pump Current
    Kim, Nam
    Kim, Wan-Seop
    Chae, Dong-Hun
    Kim, Bum-Kyu
    Ghee, Young-Seok
    Bae, Myung-Ho
    2020 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM), 2020,
  • [44] Single-Electron Charge Sensor Self-Aligned to a Quantum Dot Array by Double-Gate Patterning Process for a Large-Scale Silicon Quantum Computer
    Kuno, Takuma
    Utsugi, Takeru
    Tsuchiya, Rvuta
    Lee, Norivuki
    Shinkai, Gou
    Mine, Toshiyuki
    Yanagi, Rani
    Mizokuchi, Raisei
    Yoneda, Jun
    Kodera, Tetsuo
    Saito, Shinichi
    Hisamoto, Digh
    Mizuno, Hiroyuki
    2023 SILICON NANOELECTRONICS WORKSHOP, SNW, 2023, : 97 - 98
  • [45] Experimental Observation of Quantum Confinement Effect in ⟨110⟩ and ⟨100⟩ Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature
    Suzuki, Ryota
    Nozue, Motoki
    Saraya, Takuya
    Hiramoto, Toshiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (10)
  • [46] Tuning the room temperature nonlinear I-V characteristics of a single-electron silicon quantum dot transistor by split gates:: A simple model -: art. no. 125309
    Vincent, JK
    Narayan, V
    Willander, M
    PHYSICAL REVIEW B, 2002, 65 (12) : 1 - 6
  • [47] Thermal and Electrical Performance Study of Cold-Finger 3He Cryostat in Precision Measurement of Quantum Hall Resistance and Single-Electron Current
    Ghee, Young-Seok
    Kim, Wan-Seop
    Chae, Dong-Hun
    Kim, Bum-Kyu
    Muhojoki, Jesse
    Bae, Myung-Ho
    Kim, Nam
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2021, 70