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- [2] Suppression of series parasitic resistance and observation of quantum effects in a silicon single-electron transistor PROCEEDINGS OF THE 2001 1ST IEEE CONFERENCE ON NANOTECHNOLOGY, 2001, : 243 - 247
- [3] Room-temperature observation of negative differential conductance due to large quantum level spacing in silicon single-electron transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (2A): : L210 - L213
- [4] Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor Saitoh, M. (masumi@nano.iis.u-tokyo.ac.jp), 1600, Japan Society of Applied Physics (43):
- [6] Observation of Quantum level spectrum for Silicon Double Single-Electron Transistors 2008 IEEE SILICON NANOELECTRONICS WORKSHOP, 2008, : 27 - +
- [7] Real-time observation of single-electron movement through silicon single-electron transistor Kim, S.J., 1600, Japan Society of Applied Physics (43):
- [8] Real-time observation of single-electron movement through silicon single-electron transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (10): : 6863 - 6867
- [10] Large electron addition energy above 250 meV in a silicon quantum dot in a single-electron transistor JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B): : 2010 - 2012