Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films

被引：0
|
作者：
机构：
[1] Narayanan, Kannan L.
[2] Soga, Tetsuo
[3] Oshita, Yoshio
[4] Yamaguchi, Masafumi
来源：
Narayanan, K.L. | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Spectroscopic ellipsometry study of hydrogenated amorphous silicon carbon alloy films deposited by plasma enhanced chemical vapor deposition
    Basa, D. K.
    Abbate, G.
    Ambrosone, G.
    Coscia, U.
    Marino, A.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [22] PHOTOELECTRON EMISSION STUDY OF HYDROGENATED AMORPHOUS-CARBON FILMS PREPARED BY RF PLASMA CHEMICAL VAPOR-DEPOSITION
    NAKAYAMA, M
    UEDA, K
    SHIBAHARA, M
    MARUYAMA, K
    KAMATA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (5B): : L924 - L926
  • [23] Effect of Nitrogen on the Growth of Carbon Nitride Thin Films Deposited by RF Plasma Enhanced Chemical Vapor Deposition
    Mishra, S. K.
    Mahanta, P.
    Sen, S.
    Pathak, L. C.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2012, 4 (01) : 90 - 94
  • [24] Effects of carbon nanoparticle insertion on stress reduction in hydrogenated amorphous carbon films using plasma chemical vapor deposition
    Ono, Shinjiro
    Hwang, Sung-Hwa
    Okumura, Takamasa
    Yamashita, Naoto
    Kamataki, Kunihiro
    Kiyama, Haruki
    Itagaki, Naho
    Koga, Kazunori
    Shiratani, Masaharu
    DIAMOND AND RELATED MATERIALS, 2024, 150
  • [25] In situ plasma analysis, fluorine incorporation, thermostability, stress, and hardness comparison of fluorinated amorphous carbon and hydrogenated amorphous carbon thin films deposited on Si by plasma enhanced chemical vapor deposition
    Glew, A.D.
    Cappelli, M.A.
    Touzelbaev, M.N.
    Hu, Y.
    Materials Research Society Symposium - Proceedings, 1999, 565 : 285 - 290
  • [26] In situ plasma analysis, fluorine incorporation, thermostability, stress, and hardness comparison of fluorinated amorphous carbon and hydrogenated amorphous carbon thin films deposited on Si by plasma enhanced chemical vapor deposition
    Glew, AD
    Cappelli, MA
    Touzelbaev, MN
    Hu, Y
    LOW-DIELECTRIC CONSTANT MATERIALS V, 1999, 565 : 285 - 290
  • [27] INTERFACIAL PHASES AND THE ADHESION OF AMORPHOUS HYDROGENATED CARBON-FILMS DEPOSITED BY RF CHEMICAL VAPOR-DEPOSITION ONTO (100) SILICON
    KNIGHT, JC
    PAGE, TF
    SURFACE & COATINGS TECHNOLOGY, 1992, 53 (02): : 121 - 128
  • [28] Fracture toughness, hardness and elastic modulus of hydrogenated amorphous carbon films deposited by chemical vapor deposition
    Michel, MD
    Muhlen, LV
    Achete, CA
    Lepienski, CM
    THIN SOLID FILMS, 2006, 496 (02) : 481 - 488
  • [29] Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films
    Matsutani, T
    Asanuma, T
    Liu, C
    Kiuchi, M
    Takeuchi, T
    SURFACE & COATINGS TECHNOLOGY, 2003, 169 : 624 - 627
  • [30] Influence of krypton atoms on the structure of hydrogenated amorphous carbon deposited by plasma enhanced chemical vapor deposition
    Oliveira, M. H., Jr.
    Viana, G. A.
    de Lima, M. M., Jr.
    Cros, A.
    Cantarero, A.
    Marques, F. C.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (12)
12345