Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy

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[1] Nakashima, Hiroshi
[2] Wang, Dong
[3] Noguchi, Takashi
[4] Itani, Kousuke
[5] Wang, Junli
[6] Zhao, Liwei
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Nakashima, H. (nakasima@astec.kyushu-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 43期
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