STRUCTURE AND UNIFORMITY OF GexSi1 - x FILMS PRODUCED BY SOLID-PHASE EPITAXY ON Si.

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作者：

Kryuger, D.B.

Mikhailov, I.F.

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Soviet Microelectronics (English Translation of Mikroelektronika) | 1980年 / 9卷 / 03期

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摘要：

The degree of uniformity was studied of Ge//xSi//1// minus //x films produced by solid-phase epitaxy. Three basic questions are considered: the phase nonuniformity, the presence of inclusions of germanium or silicon phases; the macroscopic nonuniformity of the solid solution, reflecting nonuniformity of the Ge or Si concentration averaged over a zone on the order of similar 1 mm**2 within the sample; and microscopic nonuniformity of the solid solution, which reflects differences in the Ge or Si concentration in different blocks (regions of coherent scattering).

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页码：154 / 157

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