STRUCTURE AND UNIFORMITY OF GexSi1 - x FILMS PRODUCED BY SOLID-PHASE EPITAXY ON Si.

The degree of uniformity was studied of Ge//xSi//1// minus //x films produced by solid-phase epitaxy. Three basic questions are considered: the phase nonuniformity, the presence of inclusions of germanium or silicon phases; the macroscopic nonuniformity of the solid solution, reflecting nonuniformity of the Ge or Si concentration averaged over a zone on the order of similar 1 mm**2 within the sample; and microscopic nonuniformity of the solid solution, which reflects differences in the Ge or Si concentration in different blocks (regions of coherent scattering).