Properties of Ge doped a-SixCy:H films prepared by co-sputtering

被引:0
|
作者
Takamatsu Natl Coll of Technology, Takamatsu, Japan [1 ]
机构
来源
Shinku | / 3卷 / 171-174期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [11] The surface topography, structural and mechanical properties of Ge1-xCx films prepared by magnetron co-sputtering
    Jiang, Chunzhu
    Zhu, Jiaqi
    Han, Jiecai
    Cao, Wenxin
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2014, 383 : 126 - 130
  • [12] Structural and Magnetic Properties of Co-Doped MnxGe1-x Films Prepared by Magnetron Co-Sputtering
    Su, Hang
    Wang, Yan-Yan
    Gu, Guang-Rui
    Wu, Bao-Jia
    FERROELECTRICS, 2019, 546 (01) : 169 - 180
  • [13] Investigations on properties of (Zno: Al) Films prepared by RF/DC Co-sputtering
    Beijing Institute of Aeronautical Materials, Beijing 100095, China
    Telkomnika, 2012, 5 (947-952):
  • [14] THE COMPOSITIONAL DEPENDENCE OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS SI-GE FILMS PREPARED BY CO-SPUTTERING
    WEISZ, SZ
    GOLDSTEIN, Y
    GOMEZ, M
    MUIR, JA
    RESTO, O
    PEREZ, R
    THIN SOLID FILMS, 1984, 119 (01) : 59 - 65
  • [15] Optical and electrical properties of niobium-doped indium oxide thin films prepared by co-sputtering technique
    Lin, Jianrong
    Liang, Ruibin
    Tan, Haixing
    Peng, Jingyi
    Huang, Peiyuan
    Dai, Jingfei
    Li, Yongkuan
    Chen, Jianwen
    Xu, Hua
    Xiao, Peng
    THIN SOLID FILMS, 2023, 787
  • [16] Structural and Optical Properties of Cu Doped ZnO Thin Films by Co-Sputtering
    Chung, Sung Mook
    Shin, Jae-Heon
    Lee, Jeong-Min
    Ryu, Min Ki
    Cheong, Woo-Seok
    Park, Sang Hee Ko
    Hwang, Chi-Sun
    Cho, Kyoung Ik
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (01) : 782 - 786
  • [17] Electrical properties of Si-doped AlSb polycrystalline films by co-sputtering
    He, Jianxiong
    Wu, Lili
    Huang, Zheng
    Hao, Xia
    Feng, Lianghuan
    Zheng, Jiagui
    Zhang, Jingquan
    Li, Wei
    Li, Bing
    2010 ASIA-PACIFIC POWER AND ENERGY ENGINEERING CONFERENCE (APPEEC), 2010,
  • [18] Structural, optical and electrical properties of Ti doped amorphous silicon prepared by co-sputtering
    Zhou, Tianwei
    Zuo, Yuhua
    Li, Leliang
    Qiu, Kai
    Zheng, Jun
    Wang, Qiming
    VACUUM, 2014, 104 : 65 - 69
  • [19] Indium doping of amorphous SiC:H films prepared by reactive magnetron co-sputtering
    Saito, N
    Inui, Y
    Yamaguchi, T
    Nakaaki, I
    THIN SOLID FILMS, 1999, 353 (1-2) : 189 - 193
  • [20] Indium doping of amorphous SiC:H films prepared by reactive magnetron co-sputtering
    Takamatsu Natl. Coll. of Technology, Takamatsu 761-8058, Japan
    不详
    不详
    Thin Solid Films, 1 (189-193):