Effects of back-surface argon ion bombardment on electrical characteristics of Schottky barrier

被引：0
|
作者：
Li, Guanqi [1 ]
Zeng, Yongbiao [1 ]
Wang, Jianfei [1 ]
Huang, Meiqian [1 ]
Zeng, Shaohong [1 ]
机构：
[1] South China Univ of Technology, Guangzhou, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1998年 / 19卷 / 11期
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页码：861 / 864
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