Epitaxial growth and properties of MnAs/GaAs/MnAs trilayer heterostructures

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Department of Electronic Engineering, Univ. Tokyo, 7-3-1 Hongo, B., Tokyo, Japan [1 ]
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J Magn Magn Mater | / 719-721期
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This work is supported by [!text type='JS']JS[!/text]PS Research for the Future Program on `Atomic-Scale Surface and Interface Dynamics’ ([!text type='JS']JS[!/text]PS-RFTF97P00202); and a Grant-in-Aid for Scientific Research on the Priority Area `Spin Controlled Semiconductor Nanostructures’ from the Ministry of Education; Science; Sports and Culture. M.T. also thanks the support from the PRESTO Program of [!text type='JS']JS[!/text]T; Murata Foundation; and Asahi-Glass Foundation;
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