Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO2 matrix were obtained by co-sputtering of Si and SiO2 at various deposition temperatures Td (200-700°C) and annealing at different temperatures Ta (900-1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO2 matrix. This is likely connected with the Si/SiO2 interface characteristics, together with the features indicating the involvement of quantum confinement. © 1999 Elsevier Science B.V. All rights reserved.