Estimating the Level of Contamination of Semiconductor Materials.

被引：0
|
作者：
Rytova, N.S.
Fistul', V.I.
机构：
来源：
Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1977年 / 13卷 / 12期
关键词：
D O I：
暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
An expression is obtained for the equilibrium contamination of a semiconductor in the presence of a constant source of contamination. The equilibrium contamination depends both on the contamination source and on the characteristics of the semiconductor sample. As a result, in one and the same reactor the contamination of different materials by one and the same impurity differs greatly, as is shown by an example involving the contamination of GaAs and InAs by copper.
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页码：2125 / 2129
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