Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: latent defects and passivation/depassivation of defects by hydrogen

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Awadelkarim, O.O.
Fonash, S.J.
Mikulan, P.I.
Chan, Y.D.
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| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 79期
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