Molecular dynamics simulation on phosphorus behavior at Ni grain boundary

被引:0
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作者
High Temp. Materials Research Labs, Univ. Sci. Technol. Beijing, 100083, Beijing, China [1 ]
不详 [2 ]
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来源
Scripta Mater | / 2卷 / 189-195期
基金
中国国家自然科学基金;
关键词
Atoms - Computer simulation - Fracture - Grain boundaries - Molecular dynamics - Phosphorus - Segregation (metallography);
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