X-ray masks

被引:0
|
作者
Ohki, Shigehisa [1 ]
Ozawa, Akira [1 ]
Ohkubo, Takashi [1 ]
Okada, Ikuo [1 ]
机构
[1] NTT LSI Lab
来源
NTT R and D | 1994年 / 43卷 / 06期
关键词
Antivibration mountings - Argon - Chlorine - Cyclotron resonance - Etching - Mixtures - Oxygen - Tantalum - X ray lithography;
D O I
暂无
中图分类号
学科分类号
摘要
X-ray mask pattern accuracy was improved by a new method that superimposes multiple exposures using different field sizes. Significant errors induced by frame mounting were completely suppressed by a new one-point mounting method. Highly accurate Ta absorber patterns were obtained by ECR dry etching using a gaseous mixture of Cl2, O2, and Ar. X-ray masks with pattern placement accuracies as high as 0.056 μm (3σ) were successfully fabricated.
引用
收藏
页码:617 / 624
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