Annealing behaviour and ranges of implanted ions in III-V and II-VI compound semiconductor materials

被引：0
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作者：
Vakevainen, K. [1 ]
Ahlgren, T. [1 ]
Rauhala, E. [1 ]
Raisanen, J. [1 ]
机构：
[1] Univ of Helsinki, Helsinki, Finland
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1998年 / 136-138卷
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页码：563 / 567
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