PREPARATION OF CRYSTALS UNIFORMLY DOPED WITH A LOW-VOLATILITY IMPURITY.

被引：0
|
作者：
Romanenko, V.N.
机构：
来源：
Theoretical Foundations of Chemical Engineering | 1982年 / 16卷 / 04期
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暂无
中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
The conditions for doping semiconductor crystals uniformly with an impurity having a relatively low volatility are examined. It is shown that the use of a special crucible enables the concentration of the low-volatility impurity to be equalized along a crystal. Conditions are established for equalizing in crucibles having rigidly fixed and moving sections. In both cases it is shown that the magnitude of the distribution coefficient determines the geometry of the crucible and the application limits of the method.
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页码：309 / 313
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