INVESTIGATION OF THE DIFFERENTIAL ADMITTANCE OF HETEROJUNCTIONS IN DETERMINATION OF PARAMETERS OF INTERFACE STATES.

被引：0

|

作者：

Zhukov, N.D.

Klimov, B.N.

机构：

来源：

Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 06期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

SEMICONDUCTOR MATERIALS

引用

收藏

页码：615 / 616

相关论文

共 50 条

[31] Tight-binding study of interface states in semiconductor heterojunctions
Kolesnikov, AV
Lipperheide, R
Wille, U
PHYSICAL REVIEW B, 2001, 63 (20):
[32] INTERFACE STATES IN HETEROJUNCTIONS BETWEEN NARROW-GAP SEMICONDUCTORS
KANDILAROV, BD
DETCHEVA, V
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (10): : 1703 - 1716
[33] INTERFACE STATES IN BI/BI1-XSBX HETEROJUNCTIONS
AGASSI, D
CHU, TK
APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2227 - 2229
[34] THE INFLUENCE OF INTERFACE STATES UPON THE ADMITTANCE OF METAL-SEMICONDUCTOR DIODES
MURET, P
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (04) : 321 - 338
[35] Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy
Muret, P.
Auvray, L.
Salicio, O.
Dubourdieu, C.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (06) : 885 - 888
[36] An investigation of food expenditure patterns across US states.
Jekanowski, M
Binkley, J
AMERICAN JOURNAL OF AGRICULTURAL ECONOMICS, 1999, 81 (05) : 1290 - 1290
[37] A history of differential diagnosis regarding epileptic seizures and hysterical states.
Casarotti, H
EVOLUTION PSYCHIATRIQUE, 1999, 64 (03): : 511 - 530
[38] Small-signal analysis of semiconductor heterojunctions with interacting interface states
Schmeits, M
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (10) : 1217 - 1225
[39] Hydrogen-induced donor states in the MOS system: Hole traps, slow states and interface states.
De Nijs, JMM
Druijf, KG
Afanas'ev, VV
FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 425 - 430
[40] Interface electron states of solid C70/Si heterojunctions
Chen, Kaimao
Sun, Wenhong
Wu, Ke
Wu, Lanqing
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (04): : 333 - 339

← 1 2 3 4 5 →