INVESTIGATION OF THE DIFFERENTIAL ADMITTANCE OF HETEROJUNCTIONS IN DETERMINATION OF PARAMETERS OF INTERFACE STATES.

被引：0
|
作者：
Zhukov, N.D.
Klimov, B.N.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 06期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR MATERIALS
引用
收藏
页码：615 / 616
相关论文
共 50 条
  • [1] INVESTIGATION OF DIFFERENTIAL ADMITTANCE OF HETEROJUNCTIONS IN DETERMINATION OF PARAMETERS OF INTERFACE STATES
    ZHUKOV, ND
    KLIMOV, BN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 615 - 616
  • [2] THEORY OF DIFFERENTIAL ADMITTANCE OF A HETEROJUNCTION IN THE PRESENCE OF ELECTRON-STATES AT THE INTERFACE
    OVSYUK, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 127 - 132
  • [3] INTERFACE STATES AT (111) HETEROJUNCTIONS
    DJAFARIROUHANI, B
    DOBRZYNSKI, L
    FLORES, F
    LANOO, M
    TEJEDOR, C
    SURFACE SCIENCE, 1979, 80 (01) : 134 - 140
  • [4] ENERGY BARRIERS AND INTERFACE STATES AT HETEROJUNCTIONS
    FLORES, F
    TEJEDOR, C
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (04): : 731 - 749
  • [5] INTERFACE STATES IN ABRUPT SEMICONDUCTOR HETEROJUNCTIONS
    OLDHAM, WG
    MILNES, AG
    SOLID-STATE ELECTRONICS, 1964, 7 (02) : 153 - 165
  • [6] INFLUENCE OF INTERFACE STATES ON STATIC PARAMETERS OF GE-GAAS HETEROJUNCTIONS AT AVALANCHE BREAKDOWN
    DATIEV, KM
    ACTA PHYSICA ET CHEMICA, 1977, 23 (2-3): : 269 - 278
  • [7] Earthquake investigation in the United States.
    不详
    NATURE, 1925, 116 : 376 - 377
  • [8] The differential diagnosis of stuporous and excitable states.
    Herzig, E
    ZEITSCHRIFT FUR DIE GESAMTE NEUROLOGIE UND PSYCHIATRIE, 1917, 36 : 146 - 160
  • [9] INTERFACE STATES IN A LINEAR-MODEL OF HETEROJUNCTIONS
    KANDILAROV, BD
    DETCHEVA, V
    PETROVA, PC
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 70 (02): : 775 - 783
  • [10] Electrical conduction by interface states in semiconductor heterojunctions
    El Yacoubi, M
    Evrard, R
    Nguyen, ND
    Schmeits, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (04) : 341 - 348
12345